may 2009 1 mitsubishi high voltage diode module RM600DG-130S high power switching use insulated type i f ................................................................... 600a v rrm ...................................................... 6500v high insulated type 2-element in a pack aisic baseplate application tr action drives, high reliability converters / inverters, dc choppers RM600DG-130S outline drawing & circuit diagram dimensions in mm high voltage diode module high voltage diode module (k) (k) 2 4 (a) (a) 1 3 circuit diagram 42 3 1 6- 7 mounting holes screwing depth min. 16.5 4-m8 nuts +1.0 0 48 130 0.5 57 0.25 57 0.25 17 0.1 44 0.3 22 0.3 124 0.25 140 0.5 16.5 0.3 5 0.15 40.4 0.5 61.2 0.5 34.4 0.5 >pet+pbt<
may 2009 2 mitsubishi high voltage diode module RM600DG-130S high power switching use insulated type maximum ratings symbol item conditions unit ratings high voltage diode module high voltage diode module repetitive peak reverse voltage non-repetitive peak reverse voltage reverse dc voltage dc forward current surge forward current current-squared, time integration isolation voltage partial discharge extinction voltage junction temperature operating temperature storage temperature t j = ?0 c t j = +25 c t j = +125 c t j = ?0 c t j = +25 c t j = +125 c t j = 25 c t c = 25 c t j = 25 c start, t w = 8.3 ms half sign wave t j = 25 c start, t w = 8.3 ms half sign wave charged part to the baseplate rms sinusoidal, 60hz 1min. rms sinusoidal, 60hz, q pd 10 pc 5800 6300 6500 5800 6300 6500 4500 600 4800 96 10200 5100 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 v v v a a ka 2 s v v c c c v rrm v rsm v r(dc) i f i fsm i 2 t v iso v e t j t op t stg min typ max electrical characteristics symbol item conditions limits unit note 1. it doesn't include the voltage drop by internal lead resistance. 2. e rec is the integral of 0.1v r x 0.1i rr x dt. v rm = v rrm i f = 600 a t j = 25 c t j = 125 c t j = 25 c t j = 125 c repetitive reverse current forward voltage (note 1) reverse recovery time reverse recovery current reverse recovery charge reverse recovery energy (note 2) 10 90 ma v s a c j/p 10 4.00 3.60 1.0 1250 900 2.0 i rrm v fm t rr i rr q rr e rec v r = 3600 v, i f = 600 a di/dt = ?000 a/ s l s =100nh, t j = 125 c
may 2009 3 mitsubishi high voltage diode module RM600DG-130S high power switching use insulated type high voltage diode module high voltage diode module min typ max thermal characteristics symbol item conditions limits unit min typ max mechanical characteristics symbol item conditions limits unit r th(j-c) r th(c-f) junction to case (per 1/2 module) case to fin, grease = 1w/m? d (c-f) =100 m, (per 1/2 module) k/kw k/kw thermal resistance contact thermal resistance 22.0 16.0 m t m s m cti d a d s l p ce r cc?ee m8: main terminals screw m6: mounting screw tc = 25 c n? n? kg mm mm nh m ? mounting torque mass comparative tracking index clearance creepage distance internal inductance internal lead resistance 15.0 6.0 1.0 44 0.27 7.0 3.0 600 26 56 performance curves forward current i f (a) forward voltage v f (v) forward current i f (a) reverse recovery energy e rec (j/p) reverse recovery energy characteristics (typical) t j = 25 c t j = 125 c 0 200 400 600 800 1000 1200 01234567 forward characteristics (typical) 80 200 400 600 800 1000 1200 1400 0 0.5 1.0 1.5 2.0 2.5 3.0 v r = 3600v, di/dt = 2000a/ s t j = 125 c, l s = 100nh
may 2009 4 reverse recovery time t rr ( s) normalized transient thermal impedance forward current i f (a) reverse voltage v r (v) reverse recovery current i rr (a) transient thermal impedance characteristics reverse recovery current i rr (a) time (s) reverse recovery safe operating area (rrsoa) reverse recovery characteristics (typical) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 500 1000 1500 0 2000 4000 6000 8000 10 3 10 4 10 2 10 1 10 1 10 2 10 0 10 -1 10 2 10 1 10 3 10 4 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 -2 10 -3 23 57 10 -1 23 57 10 0 23 57 10 1 23 57 23 57 23 57 23 57 v r 4500v, di/dt 3000a/ s t j = 125 c v r = 3600v, di/dt = 2000a/ s t j = 125 c, l s = 100nh t rr i rr r th(j?) = 22k/kw mitsubishi high voltage diode module RM600DG-130S high power switching use insulated type high voltage diode module high voltage diode module zr th( j ? ) ( t ) = n i=1 i 1?xp t i t ? ? ? ? r i [k/kw] i [sec] 1 0.0059 0.0002 2 0.0978 0.0074 3 0.6571 0.0732 4 0.2392 0.4488
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